MDS3651URH MOSFET Transistor

The MDS3651URH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDS3651URH transistor as follows.

MDS3651URH Transistor Specification

Transistor Code		MDS3651URH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.035Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		166pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		29.8nS
Gate-Threshold Voltage (Maximum)		3V

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