MDS3603URH MOSFET Transistor

The MDS3603URH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDS3603URH transistor as follows.

MDS3603URH Transistor Specification

Transistor Code		MDS3603URH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		445pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		3V

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