MDS1903URH MOSFET Transistor

The MDS1903URH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDS1903URH transistor as follows.

MDS1903URH Transistor Specification

Transistor Code		MDS1903URH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOIC-8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.1nS
Gate-Threshold Voltage (Maximum)		3V

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