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MDS1655URH MOSFET Transistor

The MDS1655URH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDS1655URH transistor as follows.

Circuit diagram symbol of the MDS1655URH transistor

MDS1655URH Transistor Specification

Transistor Code MDS1655URH
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOIC-8L
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0175Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 121pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 3V

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