MDQ23N50DTP MOSFET Transistor

The MDQ23N50DTP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDQ23N50DTP transistor as follows.

MDQ23N50DTP Transistor Specification

Transistor Code		MDQ23N50DTP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.245Ohm
Power Dissipation (Maximum)	PD	290W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		155nS
Gate-Threshold Voltage (Maximum)		4V

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