MDQ18N50GTP MOSFET Transistor

The MDQ18N50GTP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDQ18N50GTP transistor as follows.

MDQ18N50GTP Transistor Specification

Transistor Code		MDQ18N50GTP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	245W
Drain-Source Capacitance		302pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		5V

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