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MDQ18N50GTH MOSFET Transistor

The MDQ18N50GTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDQ18N50GTH transistor as follows.

Circuit diagram symbol of the MDQ18N50GTH transistor

MDQ18N50GTH Transistor Specification

Transistor Code MDQ18N50GTH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.27Ohm
Power Dissipation (Maximum) PD 245W
Drain-Source Capacitance 302pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 80nS
Gate-Threshold Voltage (Maximum) 5V

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