MDQ16N50GTP MOSFET Transistor

The MDQ16N50GTP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDQ16N50GTP transistor as follows.

MDQ16N50GTP Transistor Specification

Transistor Code		MDQ16N50GTP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	215W
Drain-Source Capacitance		226pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		88.5nS
Gate-Threshold Voltage (Maximum)		5V

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