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MDP2N60TP MOSFET Transistor

The MDP2N60TP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP2N60TP transistor as follows.

Circuit diagram symbol of the MDP2N60TP transistor

MDP2N60TP Transistor Specification

Transistor Code MDP2N60TP
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4.5Ohm
Power Dissipation (Maximum) PD 53.9W
Drain-Source Capacitance 32pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 29.6nS
Gate-Threshold Voltage (Maximum) 5V

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