MDP1930TH MOSFET Transistor

The MDP1930TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP1930TH transistor as follows.

MDP1930TH Transistor Specification

Transistor Code		MDP1930TH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0025Ohm
Power Dissipation (Maximum)	PD	312.5W
Drain-Source Capacitance		2.123pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		24.2nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		186.3nC

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