MDP1921TH MOSFET Transistor

The MDP1921TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP1921TH transistor as follows.

MDP1921TH Transistor Specification

Transistor Code		MDP1921TH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	223W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28.8nS
Gate-Threshold Voltage (Maximum)		4V

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