MDP18N50BTH MOSFET Transistor

The MDP18N50BTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP18N50BTH transistor as follows.

MDP18N50BTH Transistor Specification

Transistor Code		MDP18N50BTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	236W
Drain-Source Capacitance		307pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		82nS
Gate-Threshold Voltage (Maximum)		4V

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