MDP16N50GTH MOSFET Transistor

The MDP16N50GTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP16N50GTH transistor as follows.

MDP16N50GTH Transistor Specification

Transistor Code		MDP16N50GTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	204.9W
Drain-Source Capacitance		226pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		88.5nS
Gate-Threshold Voltage (Maximum)		5V

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