MDP15N60GTH MOSFET Transistor

The MDP15N60GTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP15N60GTH transistor as follows.

MDP15N60GTH Transistor Specification

Transistor Code		MDP15N60GTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	231.4W
Drain-Source Capacitance		258pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		5V

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