MDP14N25CTH MOSFET Transistor

The MDP14N25CTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP14N25CTH transistor as follows.

MDP14N25CTH Transistor Specification

Transistor Code		MDP14N25CTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	126.3W
Drain-Source Capacitance		142pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		4V

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