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MDP12N50FTH MOSFET Transistor

The MDP12N50FTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP12N50FTH transistor as follows.

Circuit diagram symbol of the MDP12N50FTH transistor

MDP12N50FTH Transistor Specification

Transistor Code MDP12N50FTH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.7Ohm
Power Dissipation (Maximum) PD 165W
Drain-Source Capacitance 125pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 4.5V

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