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MDP11N60TH MOSFET Transistor

The MDP11N60TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP11N60TH transistor as follows.

Circuit diagram symbol of the MDP11N60TH transistor

MDP11N60TH Transistor Specification

Transistor Code MDP11N60TH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.55Ohm
Power Dissipation (Maximum) PD 182W
Drain-Source Capacitance 184pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 5V

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