MDP10N60GTH MOSFET Transistor

The MDP10N60GTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP10N60GTH transistor as follows.

MDP10N60GTH Transistor Specification

Transistor Code		MDP10N60GTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		151pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		5V

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