MDP10N50TH MOSFET Transistor

The MDP10N50TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDP10N50TH transistor as follows.

MDP10N50TH Transistor Specification

Transistor Code		MDP10N50TH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	141W
Drain-Source Capacitance		108pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		5V

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