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MDIS5N50TH MOSFET Transistor

The MDIS5N50TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDIS5N50TH transistor as follows.

Circuit diagram symbol of the MDIS5N50TH transistor

MDIS5N50TH Transistor Specification

Transistor Code MDIS5N50TH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251-VS
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 70W
Drain-Source Capacitance 65pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 5V

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