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MDIS3N40TH MOSFET Transistor

The MDIS3N40TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDIS3N40TH transistor as follows.

Circuit diagram symbol of the MDIS3N40TH transistor

MDIS3N40TH Transistor Specification

Transistor Code MDIS3N40TH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251-VS
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.4Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 27pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 5V

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