MDIS1903TH MOSFET Transistor

The MDIS1903TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDIS1903TH transistor as follows.

MDIS1903TH Transistor Specification

Transistor Code		MDIS1903TH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251-VS
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	36.8W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.6nS
Gate-Threshold Voltage (Maximum)		3V

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