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MDIS1903TH MOSFET Transistor

The MDIS1903TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDIS1903TH transistor as follows.

Circuit diagram symbol of the MDIS1903TH transistor

MDIS1903TH Transistor Specification

Transistor Code MDIS1903TH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251-VS
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.105Ohm
Power Dissipation (Maximum) PD 36.8W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10.6nS
Gate-Threshold Voltage (Maximum) 3V

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