MDIS1501TH MOSFET Transistor

The MDIS1501TH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDIS1501TH transistor as follows.

MDIS1501TH Transistor Specification

Transistor Code		MDIS1501TH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251-VS
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	67.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0056Ohm
Power Dissipation (Maximum)	PD	44.6W
Drain-Source Capacitance		261pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.2nS
Gate-Threshold Voltage (Maximum)		2.7V

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