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MDI1N60STH MOSFET Transistor

The MDI1N60STH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDI1N60STH transistor as follows.

Circuit diagram symbol of the MDI1N60STH transistor

MDI1N60STH Transistor Specification

Transistor Code MDI1N60STH
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 8.5Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 1pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 5V

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