MDF9N60BTH MOSFET Transistor

The MDF9N60BTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDF9N60BTH transistor as follows.

MDF9N60BTH Transistor Specification

Transistor Code		MDF9N60BTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		134pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33.4nS
Gate-Threshold Voltage (Maximum)		4V

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