MDF9N50BTH MOSFET Transistor

The MDF9N50BTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDF9N50BTH transistor as follows.

MDF9N50BTH Transistor Specification

Transistor Code		MDF9N50BTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		101pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27.3nS
Gate-Threshold Voltage (Maximum)		4V

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