MDF2N60BTH MOSFET Transistor

The MDF2N60BTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDF2N60BTH transistor as follows.

MDF2N60BTH Transistor Specification

Transistor Code		MDF2N60BTH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.5Ohm
Power Dissipation (Maximum)	PD	22.7W
Drain-Source Capacitance		30.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22.2nS
Gate-Threshold Voltage (Maximum)		4V

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