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MDF16N50GTH MOSFET Transistor

The MDF16N50GTH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDF16N50GTH transistor as follows.

Circuit diagram symbol of the MDF16N50GTH transistor

MDF16N50GTH Transistor Specification

Transistor Code MDF16N50GTH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.35Ohm
Power Dissipation (Maximum) PD 49.4W
Drain-Source Capacitance 226pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 88.5nS
Gate-Threshold Voltage (Maximum) 5V

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