MDF13N65B MOSFET Transistor

The MDF13N65B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MDF13N65B transistor as follows.

MDF13N65B Transistor Specification

Transistor Code		MDF13N65B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.46Ohm
Power Dissipation (Maximum)	PD	36.7W
Drain-Source Capacitance		243pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		81nS
Gate-Threshold Voltage (Maximum)		4V

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