MBNP2026G6 MOSFET Transistor

The MBNP2026G6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MBNP2026G6 transistor as follows.

MBNP2026G6 Transistor Specification

Transistor Code		MBNP2026G6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSOP-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.4Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		7.3pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS

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