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LSI1012XT1G MOSFET Transistor

The LSI1012XT1G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LSI1012XT1G transistor as follows.

Circuit diagram symbol of the LSI1012XT1G transistor

LSI1012XT1G Transistor Specification

Transistor Code LSI1012XT1G
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-89
Transistor SMD Code A
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 6V
Drain Current (Maximum) ID 0.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.7Ohm
Power Dissipation (Maximum) PD 0.15W
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 0.9V
Total Gate Charge 0.75nC

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