LS165 MOSFET Transistor

The LS165 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LS165 transistor as follows.

LS165 Transistor Specification

Transistor Code		LS165
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC-8
Drain-Source Voltage (Maximum)	VDS	40V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	300Ohm
Power Dissipation (Maximum)	PD	0.3W
Drain-Source Capacitance		3pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V

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