LP4411ET1G MOSFET Transistor

The LP4411ET1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP4411ET1G transistor as follows.

LP4411ET1G Transistor Specification

Transistor Code		LP4411ET1G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP-8
Transistor SMD Code		4411
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.4nS
Gate-Threshold Voltage (Maximum)		2.4V
Total Gate Charge		18.4nC

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