LP4101LT1G MOSFET Transistor

The LP4101LT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP4101LT1G transistor as follows.

LP4101LT1G Transistor Specification

Transistor Code		LP4101LT1G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		P41
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		145.54pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.73nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		15.23nC

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