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LP3407LT1G MOSFET Transistor

The LP3407LT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP3407LT1G transistor as follows.

Circuit diagram symbol of the LP3407LT1G transistor

LP3407LT1G Transistor Specification

Transistor Code LP3407LT1G
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code A07
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.07Ohm
Power Dissipation (Maximum) PD 1.4W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5.5nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 9.2nC

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