LP2307LT1G MOSFET Transistor

The LP2307LT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP2307LT1G transistor as follows.

LP2307LT1G Transistor Specification

Transistor Code		LP2307LT1G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		P07
Drain-Source Voltage (Maximum)	VDS	16V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		24nC

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