LP2305LT1G MOSFET Transistor

The LP2305LT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP2305LT1G transistor as follows.

LP2305LT1G Transistor Specification

Transistor Code		LP2305LT1G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		P05
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	0.225W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.3V

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