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LP2305DSLT1G MOSFET Transistor

The LP2305DSLT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP2305DSLT1G transistor as follows.

Circuit diagram symbol of the LP2305DSLT1G transistor

LP2305DSLT1G Transistor Specification

Transistor Code LP2305DSLT1G
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code P5S
Drain-Source Voltage (Maximum) VDS 8V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.058Ohm
Power Dissipation (Maximum) PD 0.225W
Drain-Source Capacitance 375pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 0.8V

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