LP2305DSLT1G MOSFET Transistor

The LP2305DSLT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP2305DSLT1G transistor as follows.

LP2305DSLT1G Transistor Specification

Transistor Code		LP2305DSLT1G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		P5S
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.058Ohm
Power Dissipation (Maximum)	PD	0.225W
Drain-Source Capacitance		375pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		0.8V

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