LP2301ALT1G MOSFET Transistor

The LP2301ALT1G is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LP2301ALT1G transistor as follows.

LP2301ALT1G Transistor Specification

Transistor Code		LP2301ALT1G
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		01A
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		46pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		7.2nC

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