The LND250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the LND250 transistor as follows.
| Transistor Code | LND250 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | N-Channel | |
| Package | TO236AB_SOT23 | |
| Drain-Source Voltage (Maximum) | VDS | 500V |
| Gate-Source Voltage (Maximum) | VGS | 20V |
| Drain Current (Maximum) | ID | 0.013A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.85Ohm |
| Power Dissipation (Maximum) | PD | 0.36W |
| Drain-Source Capacitance | 2pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 450nS | |
UXPython is not the creator or an official representative of the LND250 MOSFET transistor. You can download the official LND250 MOSFET transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
LND150K1 MOSFET Transistor
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.