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LND150K1 MOSFET Transistor

The LND150K1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LND150K1 transistor as follows.

Circuit diagram symbol of the LND150K1 transistor

LND150K1 Transistor Specification

Transistor Code LND150K1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO236AB_SOT23
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.013A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.85Ohm
Power Dissipation (Maximum) PD 0.36W
Drain-Source Capacitance 2pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 450nS

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