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LDN9926ET1G MOSFET Transistor

The LDN9926ET1G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the LDN9926ET1G transistor as follows.

Circuit diagram symbol of the LDN9926ET1G transistor

LDN9926ET1G Transistor Specification

Transistor Code LDN9926ET1G
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.029Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 105pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 0.9V
Total Gate Charge 5nC

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