L2N7002DW1T1G MOSFET Transistor

The L2N7002DW1T1G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the L2N7002DW1T1G transistor as follows.

L2N7002DW1T1G Transistor Specification

Transistor Code		L2N7002DW1T1G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-363
Transistor SMD Code		702
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.115A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7.5Ohm
Power Dissipation (Maximum)	PD	0.38W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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