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L2N60F MOSFET Transistor

The L2N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the L2N60F transistor as follows.

Circuit diagram symbol of the L2N60F transistor

L2N60F Transistor Specification

Transistor Code L2N60F
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 5Ohm
Power Dissipation (Maximum) PD 23W
Drain-Source Capacitance 30pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 9.3nC

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