KU047N08P MOSFET Transistor

The KU047N08P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KU047N08P transistor as follows.

KU047N08P Transistor Specification

Transistor Code		KU047N08P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	167W
Drain-Source Capacitance		815pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		200nS
Total Gate Charge		200nC

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