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KU045N10P MOSFET Transistor

The KU045N10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KU045N10P transistor as follows.

Circuit diagram symbol of the KU045N10P transistor

KU045N10P Transistor Specification

Transistor Code KU045N10P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 150A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0039Ohm
Power Dissipation (Maximum) PD 192W
Drain-Source Capacitance 1000pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 240nS

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