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KU024N06P MOSFET Transistor

The KU024N06P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KU024N06P transistor as follows.

Circuit diagram symbol of the KU024N06P transistor

KU024N06P Transistor Specification

Transistor Code KU024N06P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 200A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0021Ohm
Power Dissipation (Maximum) PD 192W
Drain-Source Capacitance 1400pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 300nS
Total Gate Charge 200nC

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