KTS1C1S250 MOSFET Transistor

The KTS1C1S250 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KTS1C1S250 transistor as follows.

KTS1C1S250 Transistor Specification

Transistor Code		KTS1C1S250
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	0.75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		51pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		15nC

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