KQS4900 MOSFET Transistor

The KQS4900 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQS4900 transistor as follows.

KQS4900 Transistor Specification

Transistor Code		KQS4900
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		1.95V
Total Gate Charge		1.6nC

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