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KQD5P10 MOSFET Transistor

The KQD5P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQD5P10 transistor as follows.

Circuit diagram symbol of the KQD5P10 transistor

KQD5P10 Transistor Specification

Transistor Code KQD5P10
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.05Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 6.3nC

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